VSN Electro Components Pvt. Ltd

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TE CONNECTIVITY AMP CONNECTORS

MURATA ELECTRONICS

NEXPERIA USA INC.

LITTELFUSE INC.

TEXAS INSTRUMENTS

STMICROELECTRONICS

PANASONIC ELECTRONIC COMPONENTS

DMT10H025SK3-13

Manufacturer DIODES INCORPORATED
Description mosfet n-ch 100v 41.2a to252 t&r
Detailed Description n-channel 100 v 41.2a (tc) 1.4w (ta) surface mount to-252 (dpak)
DatasheetDatasheet

Product Attributes

Category transistors - fets, mosfets - single fets, mosfets - fets, mosfets - single fets, mosfets
PackagingCut Tape (CT)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C41.2A (Tc)
Rds On (Max) @ Id, Vgs23mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)

Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252 (DPAK)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1544 pF @ 50 V
QualificationAEC-Q101

Environmental & Export Classifications

RoHSStatusROHS3 Compliant
MoistureSensitivityLevel1 (Unlimited)
ReachStatusReach unaffected
ExportControlClassNumber(ECCN)EAR99
HTSUSCode(HTSUS)8541.29.0095

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