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PMV280ENEAR

  • Manufacturer NEXPERIA USA INC.
  • Description mosfet n-ch 100v 1.1a to236ab
  • Detailed Description n-channel 100 v 1.1a (ta) 580mw (ta) surface mount to-236ab
  • DatasheetDatasheet

Product Attributes

  • Category transistors fets mosfets single fets mosfets fets mosfets single fets mosfets
  • PackagingCut Tape (CT)
  • Package / CaseTO-236-3, SC-59, SOT-23-3
  • Mounting TypeSurface Mount
  • Operating Temperature-55°C ~ 150°C (TJ)
  • TechnologyMOSFET (Metal Oxide)
  • FET TypeN-Channel
  • Current - Continuous Drain (Id) @ 25°C1.1A (Ta)
  • Rds On (Max) @ Id, Vgs385mOhm @ 1.1A, 10V
  • FET Feature-
  • Power Dissipation (Max)580mW (Ta)
  • Vgs(th) (Max) @ Id2.7V @ 250µA
  • Supplier Device PackageTO-236AB
  • GradeAutomotive
  • Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
  • Vgs (Max)±20V
  • Drain to Source Voltage (Vdss)100 V
  • Gate Charge (Qg) (Max) @ Vgs6.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds190 pF @ 50 V
  • QualificationAEC-Q101

Environmental & Export Classifications

  • RoHSStatusROHS3 Compliant
  • MoistureSensitivityLevel1 (Unlimited)
  • ReachStatusREACH Unaffected
  • ExportControlClassNumber(ECCN)EAR99
  • HTSUSCode(HTSUS)8541.21.0095

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