VSN Electro Components Pvt. Ltd

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TEXAS INSTRUMENTS

STMICROELECTRONICS

PANASONIC ELECTRONIC COMPONENTS

SI4800BDY-T1-GE3

Manufacturer VISHAY SILICONIX
Description mosfet n-ch 30v 6.5a 8so
Detailed Description n-channel 30 v 6.5a (ta) 1.3w (ta) surface mount 8-soic
DatasheetDatasheet

Product Attributes

Category transistors - fets, mosfets - single fets, mosfets - fets, mosfets - single fets, mosfets
PackagingCut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Rds On (Max) @ Id, Vgs18.5mOhm @ 9A, 10V
FET Feature-

Power Dissipation (Max)1.3W (Ta)
Vgs(th) (Max) @ Id1.8V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 5 V

Environmental & Export Classifications

RoHSStatusROHS3 Compliant
MoistureSensitivityLevel1 (Unlimited)
ReachStatusReach unknown
ExportControlClassNumber(ECCN)EAR99
HTSUSCode(HTSUS)8541.29.0095

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