SI9945BDY-T1-GE3

  • Manufacturer VISHAY SILICONIX
  • Description mosfet 2n-ch 60v 5.3a 8soic
  • Detailed Description mosfet array 60v 5.3a 3.1w surface mount 8-soic
  • DatasheetDatasheet

Product Attributes

  • Current - Continuous Drain (Id) @ 25°C5.3A
  • Input Capacitance (Ciss) (Max) @ Vds665pF @ 15V
  • Rds On (Max) @ Id, Vgs58mOhm @ 4.3A, 10V
  • Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
  • FET FeatureLogic Level Gate
  • Vgs(th) (Max) @ Id3V @ 250µA
  • Supplier Device Package8-SOIC

Environmental & Export Classifications

  • RoHSStatusROHS3 Compliant
  • MoistureSensitivityLevel1 (Unlimited)
  • ReachStatusReach unaffected
  • ExportControlClassNumber(ECCN)EAR99
  • HTSUSCode(HTSUS)8541.29.0095