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SIS862DN-T1-GE3

  • Manufacturer VISHAY SILICONIX
  • Description mosfet n-ch 60v 40a ppak1212-8
  • Detailed Description n-channel 60 v 40a (tc) 3.7w (ta), 52w (tc) surface mount powerpak® 1212-8
  • DatasheetDatasheet

Product Attributes

  • Power Dissipation (Max)3.7W (Ta), 52W (Tc)
  • Vgs(th) (Max) @ Id2.6V @ 250µA
  • Supplier Device PackagePowerPAK® 1212-8
  • Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
  • Vgs (Max)±20V
  • Drain to Source Voltage (Vdss)60 V
  • Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds1320 pF @ 30 V

Environmental & Export Classifications

  • RoHSStatusROHS3 Compliant
  • MoistureSensitivityLevel1 (Unlimited)
  • ReachStatusReach affected
  • ExportControlClassNumber(ECCN)EAR99
  • HTSUSCode(HTSUS)8541.29.0095

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