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SQ2310ES-T1_GE3

  • Manufacturer VISHAY SILICONIX
  • Description mosfet n-ch 20v 6a to236
  • Detailed Description n-channel 20 v 6a (tc) 2w (tc) surface mount sot-23-3 (to-236)
  • DatasheetDatasheet

Product Attributes

  • Power Dissipation (Max)2W (Tc)
  • Vgs(th) (Max) @ Id1V @ 250µA
  • Supplier Device PackageSOT-23-3 (TO-236)
  • Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
  • Vgs (Max)±8V
  • Drain to Source Voltage (Vdss)20 V
  • Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds485 pF @ 10 V

Environmental & Export Classifications

  • RoHSStatusROHS3 Compliant
  • MoistureSensitivityLevel1 (Unlimited)
  • ReachStatusReach not applicable
  • ExportControlClassNumber(ECCN)EAR99
  • HTSUSCode(HTSUS)8541.29.0095

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