VSN Electro Components Pvt. Ltd

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TE CONNECTIVITY AMP CONNECTORS

MURATA ELECTRONICS

NEXPERIA USA INC.

LITTELFUSE INC.

TEXAS INSTRUMENTS

STMICROELECTRONICS

PANASONIC ELECTRONIC COMPONENTS

SQS411ENW-T1_GE3

Manufacturer VISHAY SILICONIX
Description mosfet p-ch 40v 16a ppak1212-8w
Detailed Description p-channel 40 v 16a (tc) 39.5w (tc) surface mount powerpak® 1212-8w
DatasheetDatasheet

Product Attributes

Category transistors - fets, mosfets - single fets, mosfets - fets, mosfets - single fets, mosfets
PackagingCut Tape (CT)
Package / CasePowerPAK® 1212-8W
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Rds On (Max) @ Id, Vgs27.3mOhm @ 8A, 10V
FET Feature-
Power Dissipation (Max)39.5W (Tc)

Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerPAK® 1212-8W
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3191 pF @ 25 V
QualificationAEC-Q101

Environmental & Export Classifications

RoHSStatusROHS3 Compliant
MoistureSensitivityLevel1 (Unlimited)
ReachStatusReach unknown
ExportControlClassNumber(ECCN)EAR99
HTSUSCode(HTSUS)8541.29.0095

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